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2SK3113 - NEC

Description: 2SK3113

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PCB Footprints
2SK3113 - NEC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251 (MP-3)
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3D Models
2SK3113 - NEC  - 3D model - Transistor Outline, Vertical - TO-251 (MP-3)
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2SK3113 Details

  • Manufacturer Part Number:

    2SK3113

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-251, MP-3, 3 PIN

  • Reach Compliance Code:

    Compliant

  • Manufacturer:

    NEC Electronics America Inc

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE ENERGY RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SK3113 Overview

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Image Part Number Model
Part Image 2SK3113-AZ Renesas Electronics Corporation

Small Signal Field-Effect Transistor, 2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image 2SK3113 Renesas Electronics Corporation

Small Signal Field-Effect Transistor, 2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA