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2SK3148-E - Renesas Electronics

Description: The 2SK3148 is a Nch Single Power Mosfet 100V 20A 60Mohm To-220Fm.

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2SK3148-E - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SC-67_1
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2SK3148-E - Renesas Electronics  - 3D model - Transistor Outline, Vertical - SC-67_1
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2SK3148-E Details

  • Manufacturer Part Number:

    2SK3148-E

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220FM

  • Package Description:

    SC-67, TO-220FM, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AD

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1998-08-01

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    210 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3148-E Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3148-E is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage source with a low impedance output is recommended, and the gate-source voltage (Vgs) should be within the specified range (±20V) to prevent damage or malfunction.
  • The maximum allowable power dissipation for the 2SK3148-E is dependent on the operating temperature and package type. According to the datasheet, the maximum power dissipation is 125W at a case temperature of 25°C. However, it's crucial to perform thermal calculations and ensure proper heat sinking to prevent overheating and damage.
  • Yes, the 2SK3148-E is suitable for high-frequency switching applications due to its low gate charge and high switching speed. However, it's essential to consider the device's parasitic capacitances, inductances, and resistances, as well as the PCB layout and design, to minimize ringing and ensure reliable operation.
  • To protect the 2SK3148-E from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the final application.

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Power Field-Effect Transistor, 20A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET