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2SK3176(F) - Toshiba

Description: Toshiba 2SK3176(F) N-channel MOSFET Transistor, 30 A, 200 V, 3-Pin TO-3PN

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2SK3176(F) - Toshiba - PCB symbol
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PCB Footprints
2SK3176(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1B
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2SK3176(F) - Toshiba - 3D model - Transistor Outline, Vertical - 2-16C1B
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2SK3176(F) Details

  • Manufacturer Part Number:

    2SK3176(F)

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    925 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    580 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3176(F) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3176(F) is -40°C to 150°C, although the datasheet only specifies the electrical characteristics at 25°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be set between 2V to 4V, and the drain-source voltage (Vds) should be set between 10V to 30V, depending on the application requirements.
  • The maximum allowable power dissipation for the 2SK3176(F) is 125W, but this value can be derated based on the operating temperature and package type.
  • Yes, the 2SK3176(F) is suitable for high-frequency switching applications up to 100kHz, but the user should ensure that the device is properly snubbed and the layout is optimized to minimize parasitic inductance and capacitance.
  • To protect the 2SK3176(F) from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package or bag.

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2SK3176(F) Overview

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