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2SK3357-A - Renesas Electronics

Description: The 2SK3357 is a Nch Single Power Mosfet 60V 75A 5.8Mohm Mp-88/To-3P.

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PCB Footprints
2SK3357-A - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P (MP-88)
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3D Models
2SK3357-A - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-3P (MP-88)
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2SK3357-A Details

  • Manufacturer Part Number:

    2SK3357-A

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-88

  • Package Description:

    TO-3P, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004ZS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    562 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1500 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e6

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3 W

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3357-A Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3357-A is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, consider the device's thermal characteristics, such as thermal resistance and power dissipation, to prevent overheating. A well-designed PCB layout and thermal management system can also help maintain optimal performance.
  • When selecting a heatsink for the 2SK3357-A, consider the device's power dissipation, thermal resistance, and maximum junction temperature. The heatsink should be able to dissipate the maximum power rating of the device, and its thermal resistance should be low enough to maintain a safe junction temperature. Additionally, consider the heatsink's size, material, and mounting method to ensure effective heat transfer.
  • To protect the 2SK3357-A from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design.
  • The reliability and lifespan of the 2SK3357-A depend on various factors, including operating conditions, environmental factors, and manufacturing quality. According to the datasheet, the device is designed to meet specific reliability standards, such as AEC-Q101. However, it's essential to consult with Renesas Electronics Corporation or a qualified reliability engineer to determine the expected lifespan and reliability of the device in a specific application.

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2SK3357-A Overview

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Part Image 2SK3357 NEC Electronics Group

Power Field-Effect Transistor, 75A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SK3357 Renesas Electronics Corporation

Power Field-Effect Transistor, 75A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET