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2SK3433-AZ - Renesas Electronics

Description: The 2SK3433 is a Nch Single Power Mosfet 60V 40A 26Mohm Mp-25/To-220Ab.

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2SK3433-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB-ren5
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2SK3433-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-220AB-ren5
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2SK3433-AZ Details

  • Manufacturer Part Number:

    2SK3433-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25

  • Package Description:

    MP-25, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AH

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    44 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1500 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    47 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3433-AZ Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout for the 2SK3433-AZ in their application note AN18491, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. Renesas provides a gate resistor selection guide in their application note AN18491, which includes a calculation formula and examples to help engineers choose the optimal gate resistor value.
  • Although the datasheet specifies a maximum Vgs rating of ±20V, Renesas recommends limiting the Vgs voltage to ±15V to ensure reliable operation and prevent damage to the device.
  • For low-voltage operation, it's essential to ensure the device is properly biased. Renesas recommends using a voltage regulator or a voltage divider network to provide a stable voltage supply to the gate-source voltage (Vgs) pin, and to ensure the drain-source voltage (Vds) is within the recommended operating range.
  • For high-power applications, thermal design is critical. Renesas recommends using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, engineers should consider using thermal interface materials, such as thermal grease or thermal tape, to minimize thermal resistance.

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2SK3433-AZ Overview

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Part Image 2SK3433 NEC Electronics Group

Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SK3433 Renesas Electronics Corporation

Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB