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2SK3479-AZ - Renesas Electronics

Description: The 2SK3479 is a Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab.

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2SK3479-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0004AH-A
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2SK3479-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0004AH-A
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2SK3479-AZ Details

  • Manufacturer Part Number:

    2SK3479-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25

  • Package Description:

    MP-25, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AH

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    422 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    83 A

  • Drain-source On Resistance-Max:

    0.013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    540 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    332 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3479-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3479-AZ is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, consider the device's gate-source voltage (Vgs) and drain-source voltage (Vds) ratings, as well as the recommended operating points for the specific application.
  • The 2SK3479-AZ has a high power dissipation capability, so proper thermal management is crucial. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and follow the recommended PCB layout and design guidelines to minimize thermal resistance.
  • Yes, the 2SK3479-AZ is suitable for high-frequency switching applications due to its low gate charge and high switching speed. However, consider the device's parasitic capacitances, gate resistance, and inductance when designing the circuit to minimize ringing and ensure stable operation.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. Use voltage clamping devices, such as zener diodes or TVS diodes, and current sensing resistors to detect and respond to overvoltage and overcurrent conditions.

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2SK3479-AZ Overview

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Part Image 2SK3479-AZ NEC Electronics Group

Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SK3479 NEC Electronics Group

Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB