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2SK3562 - Toshiba

Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) MOSFET, N, 600V, TO-220SIS

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PCB Footprints
2SK3562 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10U1B (SC-67)
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3D Models
2SK3562 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10U1B (SC-67)
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2SK3562 Details

  • Manufacturer Part Number:

    2SK3562

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SC-67

  • Package Description:

    2-10U1B, SC-67, 3 PIN

  • Pin Count:

    3

  • Manufacturer:

    Toshiba America Electronic Components

  • Avalanche Energy Rating (Eas):

    345 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    1.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    240

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SK3562 Overview

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