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2SK3569 - Toshiba

Description: MOSFET N Channel 600V 10A 4V @ 1mA 750mΩ @ 5A,10V TO-220F(TO-220IS) RoHS

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PCB Footprints
2SK3569 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SC-67
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2SK3569 - Toshiba  - 3D model - Transistor Outline, Vertical - SC-67
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2SK3569 Details

  • Manufacturer Part Number:

    2SK3569

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SC-67

  • Package Description:

    LEAD FREE, 2-10U1B, SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Avalanche Energy Rating (Eas):

    363 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3569 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SK3569 is -55°C to 150°C.
  • Yes, the 2SK3569 is suitable for high-frequency switching applications due to its low gate charge and low output capacitance.
  • The recommended gate resistor value for the 2SK3569 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the 2SK3569 can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable power dissipation for the 2SK3569 is 125W, but this value can be increased by using a heat sink or other cooling methods.

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