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2SK3715-AZ - Renesas Electronics

Description: The 2SK3715 is a Nch Single Power Mosfet 60V 75A 6.0Mohm Mp-45F/To-220.

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2SK3715-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ISOLATED TO-220 (MP-45F)
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2SK3715-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - ISOLATED TO-220 (MP-45F)
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2SK3715-AZ Details

  • Manufacturer Part Number:

    2SK3715-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Package Description:

    ISOLATED TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    530 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3715-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3715-AZ is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage source with a low impedance output and a current limiting resistor are required to prevent overvoltage and overcurrent conditions. Additionally, ensure the device is operated within the recommended gate-source voltage range (Vgs) to prevent damage.
  • When designing the PCB layout, ensure that the 2SK3715-AZ is placed in a thermally efficient location, with adequate heat dissipation paths. Keep the device away from high-frequency noise sources and ensure that the gate and source pins are not swapped. Use a solid ground plane and minimize the length of the drain and source traces to reduce parasitic inductance.
  • To protect the 2SK3715-AZ from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure that the PCB is designed with ESD protection in mind, including the use of ESD diodes or resistors on the input pins. During assembly, use an ESD-safe workstation and follow proper handling procedures to prevent damage.
  • The 2SK3715-AZ is a high-reliability device with a typical lifespan of 10-15 years or more, depending on the operating conditions and environmental factors. However, it's essential to follow proper storage, handling, and operating procedures to ensure the device meets its expected lifespan. Renesas Electronics Corporation provides reliability data and guidelines in the datasheet and application notes.

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2SK3715-AZ Overview

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Part Image 2SK3715-AZ NEC Electronics Group

Power Field-Effect Transistor, 75A I(D), 60V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SK3715 NEC Electronics Group

Power Field-Effect Transistor, 75A I(D), 60V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB