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2SK4003(Q) - Toshiba

Description: N-Channel MOSFET Transistor, 3 A, 600 V, 3-Pin PW Mold2 Toshiba 2SK4003(Q)

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2SK4003(Q) - Toshiba - PCB symbol
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PCB Footprints
2SK4003(Q) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-7J2B
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3D Models
2SK4003(Q) - Toshiba - 3D model - Transistor Outline, Vertical - 2-7J2B
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2SK4003(Q) Details

  • Manufacturer Part Number:

    2SK4003(Q)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    168 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK4003(Q) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK4003(Q) is -40°C to 150°C, although the datasheet only specifies the electrical characteristics at 25°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be set between 2V to 4V, and the drain-source voltage (Vds) should be set between 10V to 30V, depending on the application requirements.
  • The maximum allowable power dissipation for the 2SK4003(Q) is 150W, but this value can be derated based on the operating temperature and package type.
  • Yes, the 2SK4003(Q) is suitable for high-frequency switching applications up to 100kHz, but the user should ensure that the device is properly snubbed and the layout is optimized to minimize parasitic inductance and capacitance.
  • To protect the 2SK4003(Q) from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.

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