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2SK4065-DL-1E - onsemi

Description: Obsolete - N-Channel Power MOSFET, 60V, 100A, 5mΩ, TO-220-3L

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2SK4065-DL-1E - onsemi PCB footprint - Other - Other - 2SK4065-DL-1E-1
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2SK4065-DL-1E Details

  • Manufacturer Part Number:

    2SK4065-DL-1E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK / TO-263-2L

  • Package Description:

    TO-263-2L, 3/2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    418AP

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    100 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Time@Peak Reflow Temperature-Max (s):

    30

2SK4065-DL-1E Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a large copper area on the PCB to dissipate heat, and keeping the thermal path as short as possible. A 2-3 oz copper thickness is recommended, and the thermal pad should be connected to a large copper plane or a heat sink.
  • To ensure the device is properly biased for optimal performance, make sure to follow the recommended biasing scheme in the datasheet. This typically involves applying a voltage to the gate pin (VGS) that is within the recommended range, and ensuring that the drain-source voltage (VDS) is within the specified limits. Additionally, ensure that the device is operated within the recommended temperature range.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, decreased reliability, and potentially even device failure. High temperatures can cause the device to degrade over time, leading to increased leakage current, reduced breakdown voltage, and decreased switching speed. It is essential to ensure that the device is operated within the recommended temperature range to ensure optimal performance and reliability.
  • To protect the device from electrostatic discharge (ESD), follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, and ensuring that the device is stored in a static-protective environment. Additionally, ensure that the device is handled and assembled in an ESD-controlled area, and that all equipment and tools are properly grounded.
  • Exceeding the maximum rated current can lead to device failure, including overheating, thermal runaway, and potentially even catastrophic failure. It is essential to ensure that the device is operated within the recommended current limits to ensure optimal performance and reliability. Exceeding the maximum rated current can also lead to reduced device lifespan and increased maintenance costs.

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2SK4065-DL-1E Overview

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Part Image 2SK4065-DL-1E SANYO Semiconductor Co Ltd

Power Field-Effect Transistor