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2SK537 - Toshiba

Description: Toshiba Filed Effect Transistor Silicon N Channel MOS TYPE,900V,1A,60W,600pF -55~150 C

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PCB Footprints
2SK537 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10A3B
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3D Models
2SK537 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10A3B
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2SK537 Details

  • Manufacturer Part Number:

    2SK537

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    60 W

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SK537 Overview

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