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2STN2360 - STMicroelectronics

Description: 2STN2360, PNP Bipolar Transistor, 3 A 60 V HFE:80 130 MHz Power, 4-Pin SOT-223

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2STN2360 - STMicroelectronics - PCB symbol
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PCB Footprints
2STN2360 - STMicroelectronics PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223
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3D Models
2STN2360 - STMicroelectronics - 3D model - SOT223 (3-Pin) - SOT-223
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2STN2360 Details

  • Manufacturer Part Number:

    2STN2360

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SURFACE MOUNT PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    130 MHz

2STN2360 Frequently Asked Questions (FAQs)

  • The 2STN2360 can operate from -40°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range (typically 10-15V) and use a suitable gate resistor (RG) to limit the gate current.
  • Use a multi-layer PCB with a solid ground plane, keep the drain and source pins as close as possible, and ensure good thermal conductivity between the device and the heat sink. A thermal pad or thermal interface material can be used to improve heat transfer.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent. Also, ensure the device is properly heatsinked to prevent thermal runaway.
  • A gate driver IC or a discrete gate drive circuit with a suitable gate resistor (RG) and a gate-source voltage (VGS) within the recommended range can be used. The gate drive circuit should be able to provide a fast rise and fall time to minimize switching losses.

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2STN2360 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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