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35CGQ150SCS - Infineon

Description: 35 Amp, 150V Schottky Diodes & Rectifiers HIGH EFFICIENCY, Case TO-254AA

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35CGQ150SCS - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA
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35CGQ150SCS - Infineon  - 3D model - Transistor Outline, Vertical - TO-254AA
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35CGQ150SCS Details

  • Manufacturer Part Number:

    35CGQ150SCS

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    HIGH RELIABILITY, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    ISOLATED

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.18 V

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-XSFM-P3

  • Non-rep Pk Forward Current-Max:

    400 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    35 A

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Reference Standard:

    MIL-PRF-19500

  • Rep Pk Reverse Voltage-Max:

    150 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    150 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

35CGQ150SCS Frequently Asked Questions (FAQs)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the 35CGQ150SCS. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage (VGE). The driver should also have a suitable propagation delay and rise/fall times to ensure proper switching. Consult Infineon's gate driver selection guide (GD Selection Guide) for more information.
  • Paralleling multiple modules can increase the overall current rating, but it requires careful consideration of the module's internal resistance, thermal management, and gate drive synchronization. Infineon provides guidelines for paralleling IGBT modules in their application note (AN2013-03). It's essential to follow these guidelines to ensure reliable operation and avoid potential issues.
  • Implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits is crucial to prevent damage to the IGBT module. Infineon recommends using a dedicated OVP/OCP IC, such as the Infineon TLE4264, which can detect overvoltage and overcurrent conditions and provide a fault signal to the system controller.
  • Handle the 35CGQ150SCS with care to prevent mechanical damage, electrostatic discharge (ESD), and moisture-related issues. Store the modules in their original packaging, away from direct sunlight, and in a dry environment. Follow Infineon's storage and handling guidelines (Package and Storage Guidelines) to ensure the module's reliability and performance.

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35CGQ150SCS Overview

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Part Image 35CGQ150PBF Infineon Technologies AG

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Part Image 35GQ150SCX Infineon Technologies AG

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Part Image 35GQ150PBF Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 150V V(RRM), Silicon, TO-254AA