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3SK293(TE85L,F) - Toshiba

Description: 3SK293(TE85L,F) N-Channel MOSFET, 30 mA, 12.5 V Depletion, 4-Pin USQ Toshiba

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3SK293(TE85L,F) - Toshiba PCB footprint - Other - Other - USQ
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3SK293(TE85L,F) - Toshiba  - 3D model - Other - USQ
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3SK293(TE85L,F) Details

  • Manufacturer Part Number:

    3SK293(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    0.03 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    125 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

3SK293(TE85L,F) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 3SK293 is -40°C to 85°C.
  • To ensure reliability in high-temperature applications, it is recommended to derate the power dissipation of the 3SK293 according to the temperature derating curve provided in the datasheet.
  • The maximum allowable power dissipation for the 3SK293 is 1.5W at an ambient temperature of 25°C.
  • The 3SK293 is a surface-mount device and should be handled according to standard surface-mount assembly procedures, including using a soldering iron with a temperature of 260°C or less and avoiding excessive mechanical stress.
  • The recommended storage condition for the 3SK293 is in a dry, cool place with a temperature range of 5°C to 30°C and humidity of 60% or less.

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