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70T3519S200BCG - Renesas Electronics

Description: The 70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.

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70T3519S200BCG - Renesas Electronics PCB footprint - BGA - BGA - BC256
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70T3519S200BCG Details

  • Manufacturer Part Number:

    70T3519S200BCG

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    CABGA

  • Pin Count:

    256

  • Manufacturer Package Code:

    BCG256

  • Country Of Origin:

    Philippines

  • ECCN Code:

    3A991.B.2.A

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Access Time-Max:

    10 ns

  • Additional Feature:

    PIPELINED OR FLOW-THROUGH ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    200 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    S-PBGA-B256

  • JESD-609 Code:

    e1

  • Length:

    17 mm

  • Memory Density:

    9437184 bit

  • Memory IC Type:

    MULTI-PORT SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    2

  • Number of Terminals:

    256

  • Number of Words:

    262144 words

  • Number of Words Code:

    256000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    256KX36

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA256,16X16,40

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.7 mm

  • Standby Current-Max:

    0.015 A

  • Standby Voltage-Min:

    2.4 V

  • Supply Current-Max:

    0.525 mA

  • Supply Voltage-Max (Vsup):

    2.6 V

  • Supply Voltage-Min (Vsup):

    2.4 V

  • Supply Voltage-Nom (Vsup):

    2.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    17 mm

70T3519S200BCG Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout guide in their application note (APL-0701) for thermal management. It suggests using a 4-layer PCB with a thermal relief pattern on the bottom layer, and placing thermal vias under the package to improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow Renesas' guidelines for thermal design and management. This includes using a heat sink, thermal interface material, and ensuring good airflow around the device. Additionally, consider using a thermistor or thermal sensor to monitor the device temperature and implement thermal protection mechanisms.
  • The datasheet provides general guidelines for the input and output capacitors, but Renesas recommends using a low-ESR ceramic capacitor (e.g., X5R or X7R) with a value between 4.7 μF to 10 μF for CIN, and a value between 10 μF to 22 μF for COUT. The capacitor selection should be based on the specific application requirements and operating conditions.
  • To minimize EMI, Renesas recommends following best practices for PCB layout, such as keeping the switching node (SW) and input capacitors (CIN) close to the device, using a solid ground plane, and minimizing the loop area of the power traces. Additionally, consider using EMI filters or shielding to reduce radiated emissions.
  • The bootstrap capacitor (CBST) should be a low-ESR ceramic capacitor with a value between 100 nF to 1 μF, and the bootstrap diode (DBST) should be a fast-recovery diode with a reverse recovery time (trr) less than 100 ns. The selection of CBST and DBST should be based on the specific application requirements and operating conditions.

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70T3519S200BCG Overview

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