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71256L35TDB - Renesas Electronics

Description: The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

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71256L35TDB - Renesas Electronics PCB footprint - Ceramic Dual-In-Line Packages - Ceramic Dual-In-Line Packages - SD28
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71256L35TDB Details

  • Manufacturer Part Number:

    71256L35TDB

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CDIP

  • Pin Count:

    28

  • Manufacturer Package Code:

    SD28

  • ECCN Code:

    3A001.A.2.C

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    35 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-CDIP-T28

  • JESD-609 Code:

    e0

  • Length:

    37.1475 mm

  • Memory Density:

    262144 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    28

  • Number of Words:

    32768 words

  • Number of Words Code:

    32000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    32KX8

  • Output Enable:

    YES

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP28,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Packing Method:

    TUBE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    240

  • Screening Level:

    MIL-STD-883 Class B

  • Seated Height-Max:

    5.08 mm

  • Standby Current-Max:

    0.0015 A

  • Standby Voltage-Min:

    4.5 V

  • Supply Current-Max:

    0.115 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Width:

    7.62 mm

71256L35TDB Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout guide in their application note (APL-AN-1201) which includes thermal design considerations, such as using thermal vias, thermal pads, and heat sinks to improve heat dissipation.
  • Renesas recommends a specific power sequencing scheme in their datasheet, which involves powering up the VCC and VCCIO pins simultaneously, followed by the VREF pin. A detailed power sequencing diagram is provided in the datasheet.
  • Renesas recommends using 0.1uF to 1uF decoupling capacitors with a voltage rating of 10V or higher, placed as close as possible to the VCC and VCCIO pins. The exact capacitor values may vary depending on the specific application and PCB layout.
  • Renesas recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input pins to protect against electrostatic discharge. The specific ESD protection scheme may vary depending on the application and environment.
  • The recommended operating temperature range for the 71256L35TDB is -40°C to +125°C, as specified in the datasheet. However, it's essential to consider the specific application and environment to ensure reliable operation within the recommended temperature range.

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71256L35TDB Overview

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