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Technical Content

71256 Model Download Search Results

Showing 25 of 1825 results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
71256L45TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L45TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L25DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L25DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256S70DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S70DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L100TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L100TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L35YG Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L35YG
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256L20YGI8 Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L20YGI8
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256S35TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S35TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256S100DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S100DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L35YG8 Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L35YG8
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256S70TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S70TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256S25DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S25DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256S55TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S55TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L25YG8 Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L25YG8
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256L35YGI8 Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L35YGI8
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256S45DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S45DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L20YG Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L20YG
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256L25YG Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L25YG
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256L70TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L70TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L70DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L70DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L35YGI Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L35YGI
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256S25TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S25TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L20YG8 Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Other 71256L20YG8
3D model available
Symbol and footprint available
 3
1 Download Model
Part Image Part Image
71256L55TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L55TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256L100DB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256L100DB
3D model not available
Symbol and footprint available
 2
1 Download Model
Part Image Part Image
71256S45TDB Renesas Electronics
1 The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. Ceramic Dual-In-Line Packages 71256S45TDB
3D model not available
Symbol and footprint available
 2
1 Download Model
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