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71256L70TDB - Renesas Electronics

Description: The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

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71256L70TDB - Renesas Electronics PCB footprint - Ceramic Dual-In-Line Packages - Ceramic Dual-In-Line Packages - SD28
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71256L70TDB Details

  • Manufacturer Part Number:

    71256L70TDB

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CDIP

  • Pin Count:

    28

  • Manufacturer Package Code:

    SD28

  • ECCN Code:

    3A001.A.2.C

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    70 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-GDIP-T28

  • JESD-609 Code:

    e0

  • Length:

    37.1475 mm

  • Memory Density:

    262144 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    28

  • Number of Words:

    32768 words

  • Number of Words Code:

    32000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    32KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    CERAMIC, GLASS-SEALED

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP28,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    240

  • Qualification Status:

    Not Qualified

  • Screening Level:

    MIL-STD-883 Class B

  • Seated Height-Max:

    5.08 mm

  • Standby Current-Max:

    0.0005 A

  • Standby Voltage-Min:

    2 V

  • Supply Current-Max:

    0.115 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Width:

    7.62 mm

71256L70TDB Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout guide in their application note (R01AN3804EJ0100) which includes thermal design considerations, such as thermal vias, copper pours, and component placement, to ensure optimal thermal performance.
  • Renesas recommends a specific power sequencing scheme in their application note (R01AN3804EJ0100) to ensure proper device operation. The sequence involves powering up the VCC, then the VDD, and finally the AVCC, with a delay of at least 10ms between each power-up.
  • Although the datasheet specifies the recommended operating conditions, it's essential to note that the maximum allowed voltage on the input pins is VCC + 0.5V, as exceeding this limit may cause damage to the device.
  • Renesas recommends implementing ESD protection measures, such as using ESD diodes or TVS diodes, on the input pins to prevent damage from electrostatic discharge. Additionally, following proper handling and storage procedures can help prevent ESD damage.
  • Renesas recommends a clock signal with a rise time of 2ns or less and a fall time of 2ns or less to ensure proper device operation. Additionally, the clock signal should be free from noise and jitter to prevent errors and ensure reliable operation.

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71256L70TDB Overview

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