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71V3577S75BQG8 - Renesas Electronics

Description: The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

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71V3577S75BQG8 - Renesas Electronics PCB footprint - BGA - BGA - 165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
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71V3577S75BQG8 - Renesas Electronics  - 3D model - BGA - 165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
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71V3577S75BQG8 Details

  • Manufacturer Part Number:

    71V3577S75BQG8

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    CABGA

  • Pin Count:

    165

  • Manufacturer Package Code:

    BQG165

  • Country Of Origin:

    Philippines

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Access Time-Max:

    7.5 ns

  • Additional Feature:

    FLOW THROUGH ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    117 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B165

  • JESD-609 Code:

    e1

  • Length:

    15 mm

  • Memory Density:

    4718592 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    165

  • Number of Words:

    131072 words

  • Number of Words Code:

    128000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    128KX36

  • Output Characteristics:

    3-STATE

  • Output Enable:

    YES

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TBGA

  • Package Equivalence Code:

    BGA165,11X15,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Reverse Pinout:

    NO

  • Seated Height-Max:

    1.2 mm

  • Standby Current-Max:

    0.03 A

  • Standby Voltage-Min:

    3.14 V

  • Supply Current-Max:

    0.255 mA

  • Supply Voltage-Max (Vsup):

    3.465 V

  • Supply Voltage-Min (Vsup):

    3.135 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Width:

    13 mm

71V3577S75BQG8 Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout guide in their application note (Renesas Document No. AP-5154) which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize noise.
  • Renesas recommends using an external POR circuit with a voltage supervisor IC, such as the Renesas RP108 series, to ensure a reliable power-on reset. The POR circuit should be designed to monitor the VCC voltage and assert a reset signal to the 71V3577S75BQG8 when the voltage is below the minimum operating voltage.
  • The 71V3577S75BQG8 has an operating temperature range of -40°C to +85°C, but it's essential to note that the device's performance and reliability may degrade at higher temperatures. It's recommended to follow the thermal management guidelines in the datasheet to ensure optimal performance.
  • Renesas provides a JTAG interface guide (Renesas Document No. AP-5155) that explains how to connect and use the JTAG interface for debugging and testing. It's essential to follow the recommended JTAG interface circuitry and signal levels to ensure reliable communication.
  • Renesas recommends implementing ESD protection measures, such as using ESD protection diodes (e.g., Renesas ESD protection diode series) and following proper handling and storage procedures, to prevent damage to the 71V3577S75BQG8 from electrostatic discharge.

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