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71V67703S75BGG8 - Renesas Electronics

Description: The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

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71V67703S75BGG8 - Renesas Electronics PCB footprint - BGA - BGA - BGG119
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71V67703S75BGG8 - Renesas Electronics  - 3D model - BGA - BGG119
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71V67703S75BGG8 Details

  • Manufacturer Part Number:

    71V67703S75BGG8

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PBGA

  • Pin Count:

    119

  • Manufacturer Package Code:

    BGG119

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    7.5 ns

  • Additional Feature:

    FLOW-THROUGH ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    117 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B119

  • JESD-609 Code:

    e1

  • Length:

    22 mm

  • Memory Density:

    9437184 bit

  • Memory IC Type:

    CACHE SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    119

  • Number of Words:

    262144 words

  • Number of Words Code:

    256000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    256KX36

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    BGA

  • Package Equivalence Code:

    BGA119,7X17,50

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.36 mm

  • Standby Current-Max:

    0.05 A

  • Standby Voltage-Min:

    3.14 V

  • Supply Current-Max:

    0.265 mA

  • Supply Voltage-Max (Vsup):

    3.465 V

  • Supply Voltage-Min (Vsup):

    3.135 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    14 mm

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71V67703S75BGG8 Overview

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Part Image IDT71V67703S75BGGI Integrated Device Technology Inc

Cache SRAM, 256KX36, 7.5ns, CMOS, PBGA119

Part Image 71V67703S75BGI Integrated Device Technology Inc

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Part Image K7B803625B-HC75 Samsung Semiconductor

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Part Image K7B803625B-HI75 Samsung Semiconductor

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Part Image IDT71V67702S75BG8 Integrated Device Technology Inc

Cache SRAM, 256KX36, 7.5ns, CMOS, PBGA119

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