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A2C50S65M2 - STMicroelectronics

Description: ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC

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PCB Footprints
A2C50S65M2 - STMicroelectronics PCB footprint - Other - Other - A2C50S65M2-3
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A2C50S65M2 - STMicroelectronics  - 3D model - Other - A2C50S65M2-3
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A2C50S65M2 Details

  • Manufacturer Part Number:

    A2C50S65M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X35

  • Number of Elements:

    7

  • Number of Terminals:

    35

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    298 ns

  • Turn-on Time-Nom (ton):

    167 ns

  • VCEsat-Max:

    2.3 V

A2C50S65M2 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The A2C50S65M2 requires a gate driver that can provide a high current pulse (typically > 1A) to quickly charge and discharge the gate capacitance. STMicroelectronics recommends using their L638x or L639x gate driver families, which are specifically designed for their power MOSFETs.
  • While the datasheet specifies a maximum VGS of ±20V, it's recommended to limit the voltage to ±15V during switching to prevent damage to the MOSFET. This is because the gate-source voltage can exceed the maximum rating during high-frequency switching due to ringing and overshoot.
  • Implement a robust overcurrent protection (OCP) and overtemperature protection (OTP) scheme using external components or a dedicated IC. Monitor the drain-source voltage and current, as well as the MOSFET's temperature, to detect and respond to fault conditions. STMicroelectronics provides guidelines for OCP and OTP in their application notes and technical documentation.
  • The A2C50S65M2 is suitable for high-frequency switching applications up to 500 kHz. However, the optimal operating frequency range depends on the specific application, PCB layout, and thermal management. It's essential to evaluate the MOSFET's performance and losses at the desired frequency to ensure reliable operation.

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A2C50S65M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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