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AIMCQ120R020M1T - Infineon

Description: CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package, 100nA, 19mΩ to 25mΩ, -55°C to 175°C

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AIMCQ120R020M1T - Infineon PCB footprint - Other - Other - PG-HDSOP-22-3 | Q-DPAK_2025
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AIMCQ120R020M1T Details

  • Manufacturer Part Number:

    AIMCQ120R020M1T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HDSOP-22-3, 22 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    383 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    116 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    R-PDSO-G22

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    22

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    577 W

  • Pulsed Drain Current-Max (IDM):

    295 A

  • Reference Standard:

    AEC-Q101; IEC60664

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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