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APT10035LLLG - Microsemi Corporation

Description: Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264 Tube

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APT10035LLLG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (L) Package
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3D Models
APT10035LLLG - Microsemi Corporation  - 3D model - Transistor Outline, Vertical - TO-264 (L) Package
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APT10035LLLG Details

  • Manufacturer Part Number:

    APT10035LLLG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-264AA

  • Package Description:

    ROHS COMPLIANT, TO-264, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    690 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

APT10035LLLG Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 2 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots.
  • Critical timing parameters include the input rise and fall times, output delay, and pulse width. Ensure these parameters are within the recommended specifications to avoid signal integrity issues.
  • Implement ESD protection using TVS diodes or ESD arrays at the input and output pins. Ensure the protection devices are rated for the maximum voltage and current of the application.
  • Use 0.1 μF to 1 μF decoupling capacitors with a voltage rating of 10 V or higher. Place them as close as possible to the device's power pins, with a maximum distance of 1 cm.

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APT10035LLLG Overview

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APT10035LLLG Alternates

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Image Part Number Model
Part Image APT10035LLLG Microchip Technology Inc

Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image APT10035LLL Microchip Technology Inc

Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image APT10035LFLL Microchip Technology Inc

Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image APT10035LFLLG Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image APT10035LFLL Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

For a full list of alternate parts for APT10035LLLG, check out Findchips.com