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APT5020BVRG - Microsemi Corporation

Description: N-Channel 500 V 26A (Tc) Through Hole TO-247 [B]

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APT5020BVRG - Microsemi Corporation - PCB symbol
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PCB Footprints
APT5020BVRG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 Package Outline
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3D Models
APT5020BVRG - Microsemi Corporation - 3D model - Transistor Outline, Vertical - TO-247 Package Outline
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APT5020BVRG Details

  • Manufacturer Part Number:

    APT5020BVRG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    1300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    104 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

APT5020BVRG Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure that the thermal pad is connected to a large copper area to dissipate heat efficiently.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots. Monitor the device's junction temperature (TJ) and adjust the system design accordingly.
  • Use a multi-layer PCB with a solid ground plane, and ensure that high-frequency signals are routed away from the APT5020BVRG. Implement proper shielding, filtering, and decoupling to minimize EMI and RFI.
  • Use a combination of capacitors and inductors to filter the output. Optimize the filter design using simulation tools and consider the output impedance, load characteristics, and desired ripple and noise levels.
  • Choose an input capacitor with a high ripple current rating, low ESR, and a voltage rating that exceeds the maximum input voltage. Ensure the capacitor is placed close to the APT5020BVRG and connected to a low-impedance node.

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APT5020BVRG Overview

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APT5020BVRG Alternates

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Image Part Number Model
Part Image APT5020BVRG Microchip Technology Inc

Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image APT5020BVR Microchip Technology Inc

Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image APT5020BVR Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image SML50B26 TT Electronics Power and Hybrid / Semelab Limited

26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Part Image SML50B26R3 TT Electronics Resistors

Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
For a full list of alternate parts for APT5020BVRG, check out Findchips.com