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APT77N60BC6 - Microsemi Corporation

Description: Trans MOSFET N-CH 600V 77A 3-Pin(3+Tab) TO-247

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APT77N60BC6 - Microsemi Corporation PCB footprint - Other - Other - APT77N60BC6-1
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APT77N60BC6 - Microsemi Corporation  - 3D model - Other - APT77N60BC6-1
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APT77N60BC6 Details

  • Manufacturer Part Number:

    APT77N60BC6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-247

  • Package Description:

    TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    1954 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    77 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    481 W

  • Pulsed Drain Current-Max (IDM):

    272 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

APT77N60BC6 Frequently Asked Questions (FAQs)

  • Microsemi recommends a PCB layout with a large copper area connected to the drain pad to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended, and the use of thermal vias can further improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using a heat sink with a thermal interface material, and ensuring good airflow around the device.
  • Microsemi recommends using a gate drive circuit with a high-current capability (e.g., 1-2 A) and a low output impedance to ensure fast switching times and minimize ringing. A gate resistor value of 10-20 ohms is typically recommended.
  • To protect the APT77N60BC6 from ESD, it is essential to follow proper handling and storage procedures, such as using ESD-safe packaging, wrist straps, and mats. Additionally, incorporating ESD protection devices, such as TVS diodes, in the circuit can help prevent ESD damage.
  • Operating the APT77N60BC6 at high frequencies can lead to increased switching losses, reduced efficiency, and potential oscillations. To mitigate these effects, it is essential to optimize the gate drive circuit, ensure proper PCB layout, and consider using a snubber circuit to reduce ringing.

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