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AS2333FGE-7 - Diodes Incorporated

Description: Zero-Drift Amplifier 2 Circuit Rail-to-Rail U-DFN3030-8 (Type E)

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AS2333FGE-7 - Diodes Incorporated PCB footprint - Small Outline No-lead - Small Outline No-lead - U-DFN3030-8
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AS2333FGE-7 - Diodes Incorporated  - 3D model - Small Outline No-lead - U-DFN3030-8
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AS2333FGE-7 Details

  • Manufacturer Part Number:

    AS2333FGE-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Average Bias Current-Max (IIB):

    0.0002 µA

  • Bias Current-Max (IIB) @25C:

    0.0002 µA

  • Common-mode Reject Ratio-Min:

    106 dB

  • Common-mode Reject Ratio-Nom:

    120 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    22 µV

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Low-Bias:

    YES

  • Low-Offset:

    YES

  • Micropower:

    YES

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.12,25

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Power:

    NO

  • Programmable Power:

    NO

  • Seated Height-Max:

    0.63 mm

  • Slew Rate-Nom:

    0.12 V/us

  • Supply Current-Max:

    0.056 mA

  • Supply Voltage Limit-Max:

    6.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    350

  • Voltage Gain-Min:

    199526

  • Wideband:

    NO

  • Width:

    3 mm

AS2333FGE-7 Frequently Asked Questions (FAQs)

  • A good PCB layout for the AS2333FGE-7 should prioritize thermal dissipation. Place the device near a thermal pad or a heat sink, and ensure that the PCB has sufficient copper area to dissipate heat. A 2-3 layer PCB with a solid ground plane is recommended. Avoid routing high-frequency signals near the device to minimize electromagnetic interference.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves setting the input voltage (VIN) to a stable 2.5V to 5.5V, and the enable pin (EN) to a logic high (VCC) or low (GND) depending on the desired state. Additionally, ensure that the output capacitor (COUT) is properly sized to filter out noise and ripple.
  • Operating the AS2333FGE-7 outside the recommended temperature range of -40°C to 85°C may affect its performance, reliability, and lifespan. Elevated temperatures can increase power consumption, reduce efficiency, and accelerate component degradation. Prolonged exposure to extreme temperatures may lead to permanent damage or failure.
  • To troubleshoot issues with the AS2333FGE-7, start by verifying the input voltage, output voltage, and enable pin states using an oscilloscope or multimeter. Check for proper PCB layout, component selection, and soldering quality. Ensure that the device is properly biased and that the output capacitor is correctly sized. If issues persist, consult the datasheet and application notes or contact Diodes Incorporated's technical support for further assistance.
  • Yes, the AS2333FGE-7 is a high-frequency device that can generate electromagnetic interference (EMI). To minimize EMI, follow proper PCB layout practices, such as separating high-frequency signals from low-frequency signals, using shielding, and implementing filtering techniques. Additionally, ensure that the device is properly decoupled and that the output capacitor is correctly sized to reduce noise and ripple.

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