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AS4C512M16D4-75BCN - Alliance Memory

Description: DRAM SDRAM - DDR4

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PCB Footprints
AS4C512M16D4-75BCN - Alliance Memory PCB footprint - BGA - BGA - 96-Ball7.5x13.5x1.2mm(max)
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AS4C512M16D4-75BCN - Alliance Memory  - 3D model - BGA - 96-Ball7.5x13.5x1.2mm(max)
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AS4C512M16D4-75BCN Details

  • Manufacturer Part Number:

    AS4C512M16D4-75BCN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Alliance Memory Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    1333 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    8589934592 bit

  • Memory IC Type:

    DDR4 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    512MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.04 A

  • Supply Current-Max:

    0.43 mA

  • Supply Voltage-Max (Vsup):

    1.26 V

  • Supply Voltage-Min (Vsup):

    1.14 V

  • Supply Voltage-Nom (Vsup):

    1.2 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    7.5 mm

AS4C512M16D4-75BCN Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AS4C512M16D4-75BCN is 0°C to 70°C.
  • The AS4C512M16D4-75BCN requires a refresh cycle every 64ms, with a minimum of 8192 refreshes within an 64ms interval.
  • The AS4C512M16D4-75BCN supports a maximum clock frequency of 75MHz.
  • After power-up, the SDRAM must be initialized by sending a series of commands, including a PRECHARGE ALL command, an AUTOREFRESH command, and a MODE REGISTER SET command.
  • The latency of the AS4C512M16D4-75BCN is 4 clock cycles (CL4).

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AS4C512M16D4-75BCN Overview

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