Description: CMOS SRAM
AS6C1008-55PCN
Yes
Active
DIP
32
Taiwan
EAR99
8542.32.00.41
20 Weeks
Alliance Memory Inc
4
55 ns
COMMON
R-PDIP-T32
e3
41.91 mm
1048576 bit
STANDARD SRAM
8
3
1
131072 words
128000
ASYNCHRONOUS
70 °C
128KX8
3-STATE
PLASTIC/EPOXY
DIP32,.6
RECTANGULAR
IN-LINE
PARALLEL
245
Not Qualified
3.937 mm
0.000001 A
1.5 V
0.06 mA
5.5 V
2.7 V
3 V
NO
CMOS
COMMERCIAL
MATTE TIN
THROUGH-HOLE
2.54 mm
DUAL
30
15.24 mm
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