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ASFC8G31M-51BIN - Alliance Memory

Description: eMMC 8GB 64GB X 1 NAND - 3V - 153 Ball FBGA

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PCB Footprints
ASFC8G31M-51BIN - Alliance Memory PCB footprint - BGA - BGA - 153ball FBGA
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3D Models
ASFC8G31M-51BIN - Alliance Memory  - 3D model - BGA - 153ball FBGA
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ASFC8G31M-51BIN Details

  • Manufacturer Part Number:

    ASFC8G31M-51BIN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    2 Weeks

  • Manufacturer:

    Alliance Memory Inc

  • YTEOL:

    0

  • Clock Frequency-Max (fCLK):

    200 MHz

  • Command User Interface:

    NO

  • Data Polling:

    NO

  • JESD-30 Code:

    R-PBGA-B153

  • Length:

    13 mm

  • Memory Density:

    68719476736 bit

  • Memory IC Type:

    FLASH CARD

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    153

  • Number of Words:

    8589934592 words

  • Number of Words Code:

    8000000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    8GX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA153,14X14,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    3 V

  • Seated Height-Max:

    1 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    BOTTOM

  • Toggle Bit:

    NO

  • Type:

    MLC NAND TYPE

  • Width:

    11.5 mm

ASFC8G31M-51BIN Frequently Asked Questions (FAQs)

  • The ASFC8G31M-51BIN has an operating temperature range of 0°C to 70°C, and an extended temperature range of -40°C to 85°C for industrial applications.
  • To enter self-refresh mode, the device must be in the idle state, and the CKE pin must be low. The self-refresh mode is exited by setting the CKE pin high and waiting for the tRP (row precharge) time.
  • The ASFC8G31M-51BIN supports a maximum clock frequency of 166 MHz.
  • After power-up, the SDRAM must be initialized by applying a minimum of 200us of power, followed by a minimum of 100us of clock cycles with CKE low, and then a minimum of 400us of clock cycles with CKE high.
  • The ASFC8G31M-51BIN requires a minimum voltage of 1.7V for VDD and VDDQ, and 1.2V for VDDSPD.

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ASFC8G31M-51BIN Overview

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