Description:The AT25FF321A is a member of our Standard class code and data storage solutions and is ideally suited for systems that need fast Read performance and low Sleep power for boot/code shadowing and Execute-in-Place tasks. It’s low power consumption and wide operating voltage range are optimized for battery-powered designs.
The recommended operating voltage range for the AT25FF321A-SHN-T is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 3.7V for a short duration, but prolonged operation outside the recommended range may affect its performance and reliability.
During power-up, the HOLD pin should be kept high (VCC) until the power supply has stabilized. During power-down, the HOLD pin should be kept low (GND) to prevent any unwanted writes or accesses to the device. It's also recommended to add a pull-up resistor to the HOLD pin to ensure it remains high during power-up.
The AT25FF321A-SHN-T supports up to 100,000 write cycles per sector, with a total of 4,096 sectors. This means the device can withstand a total of 409,600,000 write cycles (100,000 cycles/sector * 4,096 sectors).
To securely erase the AT25FF321A-SHN-T, use the Chip Erase command (0xC7) followed by a sector erase command (0xD8) for each sector. This will erase all data and security registers. Additionally, consider using a secure erase algorithm that incorporates multiple erase cycles and verification steps to ensure data is completely removed.
The WP (Write Protect) pin is used to protect the entire memory array or specific sectors from write operations. When the WP pin is low (GND), the entire memory array is write-protected. When the WP pin is high (VCC), write protection is disabled. To protect specific sectors, use the sector protection registers (SPR) in conjunction with the WP pin.
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AT25FF321A-SHN-T Overview
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