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AT25SF041-MAHD-T - Adesto Technologies

Description: Flash Memory 8-UDFN (2x3x0.6), IND TEMP, 2.5V, T&R

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AT25SF041-MAHD-T - Adesto Technologies PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA3 - UDFN
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AT25SF041-MAHD-T - Adesto Technologies  - 3D model - Small Outline No-lead - 8MA3 - UDFN
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AT25SF041-MAHD-T Details

  • Manufacturer Part Number:

    AT25SF041-MAHD-T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    UDFN-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Adesto Technologies Corporation

  • YTEOL:

    0

  • Clock Frequency-Max (fCLK):

    85 MHz

  • Data Retention Time-Min:

    20

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Memory Density:

    4194304 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    524288 words

  • Number of Words Code:

    512000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512KX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.12,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3 V

  • Seated Height-Max:

    0.6 mm

  • Serial Bus Type:

    SPI

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.5 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Width:

    2 mm

AT25SF041-MAHD-T Frequently Asked Questions (FAQs)

  • The AT25SF041-MAHD-T has a minimum of 100,000 write cycles, but the actual number of write cycles may vary depending on the usage and operating conditions.
  • The AT25SF041-MAHD-T uses a page-based write architecture, where data is written in pages of 256 bytes. The device also supports block erase, where a block of 4KB can be erased at a time.
  • The WP# (Write Protect) pin is used to prevent accidental writes to the device. When the WP# pin is low, the device is in a write-protected state, and any write operations will be ignored.
  • The AT25SF041-MAHD-T has a built-in power-on reset circuit that ensures the device is in a known state after power-up. During power-down, the device enters a low-power standby mode to minimize power consumption.
  • The recommended operating voltage range for the AT25SF041-MAHD-T is 2.7V to 3.6V, although the device can operate down to 2.3V with some performance degradation.

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