Description:The AT45DB021E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.
The recommended operating voltage range for the AT45DB021E-MHN-T is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 3.7V for a short duration, but prolonged operation outside the recommended range may affect its performance and reliability.
During power-up, the HOLD pin should be kept high until the power supply has stabilized. During power-down, the HOLD pin should be kept low to prevent any unwanted writes or accesses to the device. It's also recommended to keep the HOLD pin low during reset sequences to ensure a clean reset.
The AT45DB021E-MHN-T supports up to 10,000 erase cycles per sector, with a total of 256 sectors. This means the device can withstand a total of 2,560,000 erase cycles (10,000 cycles/sector * 256 sectors) before its endurance is compromised.
To implement a reliable write protection mechanism, you can use the WP pin in conjunction with the SRWD (Software Write Disable) bit in the Status Register. When the WP pin is low and the SRWD bit is set, the device is write-protected. Additionally, you can use the sector protection mechanism, which allows you to protect individual sectors or the entire device from writes.
The recommended method for detecting the end of an erase or program operation is to poll the RY/BY (Ready/Busy) pin or the RDY (Ready) bit in the Status Register. When the RY/BY pin is high or the RDY bit is set, the operation is complete. You can also use the E/E (Erase/Program) bit in the Status Register to determine the status of the operation.
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AT45DB021E-MHN-T Overview
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