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ATP101-TL-H - onsemi

Description: Obsolete - P-Channel Power MOSFET, -30V, -40A, 18.5mΩ

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ATP101-TL-H - onsemi PCB footprint - Other - Other - ATP101-TL-H-5
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ATP101-TL-H - onsemi  - 3D model - Other - ATP101-TL-H-5
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ATP101-TL-H Details

  • Manufacturer Part Number:

    ATP101-TL-H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (Single Gauge) / ATPAK

  • Package Description:

    HALOGEN AND LEAD FREE, ATPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AM

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN BISMUTH

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ATP101-TL-H Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an internal or bottom-side copper plane. A minimum of 2oz copper thickness is recommended.
  • The ATP101-TL-H requires a bias voltage of 5V to 15V on the VCC pin, and a bias current of 1mA to 10mA. A decoupling capacitor of 10uF or larger is recommended between VCC and GND to filter out noise.
  • The maximum allowable power dissipation of the ATP101-TL-H is 1.5W. Exceeding this limit can cause the device to overheat and potentially fail.
  • The ATP101-TL-H is sensitive to ESD. Handling the device by the body or using an ESD wrist strap can prevent damage. Anti-static packaging and storage is also recommended.
  • The recommended operating temperature range for the ATP101-TL-H is -40°C to 125°C. Operating outside this range can affect the device's performance and reliability.

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ATP101-TL-H Overview

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Part Image ATP101 onsemi

Power Field-Effect Transistor, 25A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET