Part Image

ATP112-TL-H - onsemi

Description: ON Semiconductor ATP112-TL-H P-channel MOSFET Transistor, 25 A, -25 V, 3-Pin ATPAK

Download ATP112-TL-H Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
ATP112-TL-H - onsemi PCB footprint - Other - Other - DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O_1
click to zoom
3D Models
ATP112-TL-H - onsemi  - 3D model - Other - DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O_1
click to zoom

ATP112-TL-H Details

  • Manufacturer Part Number:

    ATP112-TL-H

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AM

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    25 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN BISMUTH

  • Time@Peak Reflow Temperature-Max (s):

    30

ATP112-TL-H Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a proper heat sink design, ensure good airflow, and consider using a thermal interface material (TIM) to reduce thermal resistance. Monitor the device's junction temperature (TJ) and adjust the system design accordingly.
  • Exceeding the maximum TJ rating can lead to reduced lifespan, decreased performance, and potential device failure. Ensure the system design keeps TJ within the recommended range (typically 150°C for the ATP112-TL-H).
  • Implement proper ESD protection measures, such as using ESD-sensitive handling procedures, and consider adding external protection devices (e.g., TVS diodes) to the circuit. Ensure the PCB design includes adequate clearance and creepage distances.
  • Follow the onsemi recommended soldering profile: peak temperature 260°C, time above 217°C 60-90 seconds, and a maximum of 3 reflow cycles. For rework, use a low-temperature soldering iron (below 350°C) and a solder with a melting point below 217°C.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

ATP112-TL-H Overview

Use the download button to access the ATP112-TL-H schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ATP11, or try a keyword search, such as Power Field-Effect Transistors

Parts related to ATP112-TL-H

Showing 0 results