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AUIRF1324 - Infineon

Description: MOSFET

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AUIRF1324 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGEOUTLINE
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AUIRF1324 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGEOUTLINE
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AUIRF1324 Details

  • Manufacturer Part Number:

    AUIRF1324

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    24 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    1412 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF1324 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the AUIRF1324 in the application note AN2014-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. Infineon provides a gate resistor selection guide in the application note AN2014-02, which helps engineers choose the optimal value based on their design constraints.
  • The maximum allowed junction temperature for the AUIRF1324 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal reliability and performance.
  • Yes, the AUIRF1324 can be used in a half-bridge configuration, but it requires additional external components, such as a bootstrap diode and a capacitor, to ensure proper operation. Infineon provides a half-bridge configuration example in the application note AN2014-03.
  • Infineon provides EMC guidelines for the AUIRF1324 in the application note AN2014-04, which includes recommendations for PCB layout, component selection, and shielding to minimize electromagnetic interference and ensure compliance with relevant standards.

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Part Image IRF1324PBF Infineon Technologies AG

Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image AUIRF1324 International Rectifier

Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB