AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
470 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
240 A
Drain-source On Resistance-Max:
0.0014 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-262AA
JESD-30 Code:
R-PSIP-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
IN-LINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
375 W
Pulsed Drain Current-Max (IDM):
1544 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
40
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
AUIRF3004WL Frequently Asked Questions (FAQs)
Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink and thermal interface material to reduce thermal resistance.
The maximum allowed voltage on the drain-source pins is 30V, as specified in the datasheet. Exceeding this voltage can lead to device damage or failure.
Yes, the AUIRF3004WL is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, including rise and fall times, and ensure that the application's requirements are within the device's capabilities.
To protect the device from ESD, follow standard ESD handling procedures, including using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, consider adding ESD protection components, such as TVS diodes, in the application circuit.
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AUIRF3004WL Overview
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