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AUIRF7341Q - Infineon

Description: AUIRF7341Q Dual N-Channel MOSFET, 5.1 A, 55 V HEXFET, 8-Pin SOIC Infineon

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AUIRF7341Q - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC-ren1
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AUIRF7341Q - Infineon  - 3D model - Small Outline Packages - 8 Lead SOIC-ren1
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AUIRF7341Q Details

  • Manufacturer Part Number:

    AUIRF7341Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    5.1 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF7341Q Frequently Asked Questions (FAQs)

  • The AUIRF7341Q is a 40V, 4A, 100MHz half-bridge N-channel MOSFET, and its maximum operating frequency is 100MHz.
  • To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to follow the thermal design guidelines outlined in the datasheet and application notes.
  • The recommended gate drive voltage for the AUIRF7341Q is between 10V and 15V, with a maximum gate-source voltage of 20V.
  • To protect the AUIRF7341Q from overvoltage and overcurrent, it is recommended to use a voltage regulator and a current limiter in the circuit design, and to follow the guidelines outlined in the datasheet and application notes.
  • The maximum junction temperature of the AUIRF7341Q is 150°C, and it is recommended to keep the junction temperature below 125°C for optimal performance and reliability.

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AUIRF7341Q Overview

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Part Image AUIRF7341QTR Infineon Technologies AG

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7341TRPBF International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7341PBF International Rectifier

Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image AUIRF7341QTR International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7341QTRPBF International Rectifier

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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