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AUIRF7343Q - Infineon

Description: AUTOMOTIVE MOSFET

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AUIRF7343Q - Infineon - PCB symbol
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PCB Footprints
AUIRF7343Q - Infineon PCB footprint - Other - Other - SOIC127P600X175-8N
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3D Models
AUIRF7343Q - Infineon - 3D model - Other - SOIC127P600X175-8N
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AUIRF7343Q Details

  • Manufacturer Part Number:

    AUIRF7343Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    4.7 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    38 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF7343Q Frequently Asked Questions (FAQs)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the AUIRF7343Q. It's essential to follow these guidelines to ensure optimal performance, thermal stability, and to prevent overheating.
  • The input capacitor selection depends on the specific application and operating conditions. As a general rule, a low-ESR capacitor with a value between 10nF to 100nF is recommended. It's essential to consider the capacitor's voltage rating, temperature coefficient, and ripple current capability. Infineon's application note (AN2014-01) provides more detailed guidance on input capacitor selection.
  • The maximum allowed voltage drop across the AUIRF7343Q is typically around 1.5V to 2V, depending on the specific application and operating conditions. Exceeding this voltage drop can lead to reduced performance, increased power dissipation, and potentially even device damage. It's essential to ensure that the device is operated within the recommended voltage range.
  • Overcurrent protection is crucial to prevent device damage. Infineon recommends using an external current sense resistor and a dedicated overcurrent protection IC. The application note (AN2014-01) provides a detailed example of an overcurrent protection circuit. Additionally, the device's built-in overcurrent protection feature can be enabled by connecting the OCP pin to a suitable resistor and capacitor network.
  • The AUIRF7343Q is designed to operate at frequencies up to 1 GHz. However, the optimal operating frequency range depends on the specific application and the device's configuration. Infineon recommends consulting the datasheet and application notes for specific guidance on operating frequency ranges and device configuration.

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AUIRF7343Q Overview

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AUIRF7343Q Alternates

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Image Part Number Model
Part Image AUIRF7343QTR Infineon Technologies AG

Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7343TR Infineon Technologies AG

Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7343TR International Rectifier

Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7343QTRPBF Infineon Technologies AG

Power Field-Effect Transistor, 4.7A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET
Part Image IRF7343ITRPBF International Rectifier

Power Field-Effect Transistor, 4.7A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET
For a full list of alternate parts for AUIRF7343Q, check out Findchips.com