AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
4.8 A
Drain-source On Resistance-Max:
0.045 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
MS-012AA
JESD-30 Code:
R-PDSO-G8
JESD-609 Code:
e3
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs):
2.5 W
Pulsed Drain Current-Max (IDM):
46 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
40
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
AUIRF7379QTR Frequently Asked Questions (FAQs)
Infineon provides a reference design and layout guidelines in their application notes and evaluation boards. It's essential to follow these guidelines to ensure optimal thermal performance and minimize electromagnetic interference (EMI).
The gate drive circuit should be designed to provide a fast rise and fall time, low impedance, and sufficient current capability. Infineon recommends using a dedicated gate driver IC, such as the Infineon 1EDF7171, and following their application notes for optimal design.
Monitor the device's junction temperature, drain-source voltage, and current. Implement over-temperature protection, over-current protection, and under-voltage lockout to ensure reliable operation and prevent damage.
Follow Infineon's guidelines for PCB layout, use a shielded enclosure, and implement EMI filters and shielding to minimize electromagnetic radiation. Ensure that the design meets the relevant EMC standards and regulations.
Infineon provides test and validation procedures in their application notes and datasheet. Perform static and dynamic testing, including characterization of the device's electrical parameters, and validate the design using simulation tools and prototyping.
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AUIRF7379QTR Overview
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