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AUIRFL024NTR - Infineon

Description: MOSFET Automotive MOSFET 55V, 2.8A, 75 mOhm

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AUIRFL024NTR - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - AUIRFL024NTR
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AUIRFL024NTR - Infineon  - 3D model - SOT223 (3-Pin) - AUIRFL024NTR
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AUIRFL024NTR Details

  • Manufacturer Part Number:

    AUIRFL024NTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    0.0028 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFL024NTR Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AUIRFL024NTR is -40°C to 150°C.
  • To ensure reliability, follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper heat sinking and cooling.
  • Follow the recommended PCB layout guidelines in the datasheet, including using a solid ground plane, minimizing trace lengths, and using a decoupling capacitor.
  • Yes, the AUIRFL024NTR is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and design considerations to minimize parasitic inductance and capacitance.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to prevent damage to the device.

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AUIRFL024NTR Overview

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AUIRFL024NTR Alternates

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Image Part Number Model
Part Image IRFL024NPBF International Rectifier

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL024NTR International Rectifier

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image AUIRFL024N International Rectifier

Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL024N Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL024NTR Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

For a full list of alternate parts for AUIRFL024NTR, check out Findchips.com