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AUIRFP4110 - Infineon

Description: Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(3+Tab) TO-247AC Tube

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Symbol
AUIRFP4110 - Infineon - PCB symbol
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PCB Footprints
AUIRFP4110 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_2
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3D Models
AUIRFP4110 - Infineon - 3D model - Transistor Outline, Vertical - TO-247AC_2
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AUIRFP4110 Details

  • Manufacturer Part Number:

    AUIRFP4110

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    670 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFP4110 Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The AUIRFP4110 requires a bias voltage of 5V ± 10% and a bias current of 10mA ± 10%. Ensure the bias circuitry is designed to provide a stable voltage and current to the device.
  • Infineon recommends a resistive match circuit with a 50Ω load impedance to ensure optimal power transfer. A DC blocking capacitor and a bias-T network may also be required depending on the application.
  • The AUIRFP4110 has a built-in thermal shutdown protection that activates when the junction temperature exceeds 175°C. Ensure your design includes a thermal monitoring circuit to detect and respond to thermal shutdown events.
  • Infineon recommends using ESD protection diodes or TVS diodes on the RF input and output pins to protect the device from electrostatic discharge events.

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AUIRFP4110 Overview

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