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AUIRFP4568 - Infineon

Description: MOSFET N-CHANNEL 100+

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AUIRFP4568 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - AUIRFP4568
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AUIRFP4568 - Infineon  - 3D model - Transistor Outline, Vertical - AUIRFP4568
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AUIRFP4568 Details

  • Manufacturer Part Number:

    AUIRFP4568

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany, Mainland China, Mexico, Taiwan

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    763 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    171 A

  • Drain-source On Resistance-Max:

    0.0059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    203 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    517 W

  • Pulsed Drain Current-Max (IDM):

    684 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFP4568 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit. A voltage regulator and a bias resistor network can be used to set the desired quiescent current and voltage.
  • The maximum allowable power dissipation for the AUIRFP4568 is 150W. However, it's recommended to derate the power dissipation based on the ambient temperature and the thermal resistance of the PCB.
  • The device is sensitive to ESD. It's recommended to handle the device with an ESD wrist strap or mat, and to use ESD-protected packaging and storage.
  • The recommended gate drive voltage for the AUIRFP4568 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

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AUIRFP4568 Overview

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Part Image IRFP4568PBF Infineon Technologies AG

Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image SP001560548 Infineon Technologies AG

Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC