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AUIRFR3806TRL - Infineon

Description: N-Channel 60 V 43A (Tc) 71W (Tc) Surface Mount TO-252AA (DPAK)

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AUIRFR3806TRL - Infineon PCB footprint - Other - Other - AUIRFR3806TRL-3
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AUIRFR3806TRL Details

  • Manufacturer Part Number:

    AUIRFR3806TRL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    ROHS COMPLIANT, PLASTIC, DPAK-3

  • Country Of Origin:

    Mainland China, Mexico, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Additional Feature:

    HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    73 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    43 A

  • Drain-source On Resistance-Max:

    0.0158 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71 W

  • Pulsed Drain Current-Max (IDM):

    170 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFR3806TRL Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a thermistor or thermal sensor to monitor the device temperature.
  • The maximum allowed voltage on the input pins is 5.5V, but it's recommended to keep it below 5V to ensure reliable operation and prevent damage to the device.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input lines, and follow proper handling and storage procedures to prevent ESD damage.
  • The recommended operating frequency range for the AUIRFR3806TRL is 10 kHz to 1 MHz, but it can operate up to 2 MHz with reduced performance.

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AUIRFR3806TRL Overview

Use the download button to access the AUIRFR3806TRL schematic symbol and PCB footprint.
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AUIRFR3806TRL Alternates

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Part Image IRFR3806TRLPBF Infineon Technologies AG

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3806TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3806PBF International Rectifier

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3806TRLPBF International Rectifier

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR3806TRR International Rectifier

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for AUIRFR3806TRL, check out Findchips.com