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AUIRFR5305TRL - Infineon

Description: MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms

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AUIRFR5305TRL Details

  • Manufacturer Part Number:

    AUIRFR5305TRL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DPAK-3/2

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    250 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFR5305TRL Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the center of the board, and the input and output tracks should be kept as short as possible.
  • The device requires a single 5V supply voltage. Ensure that the voltage supply is stable and well-regulated, and that the device is properly decoupled with 100nF and 10uF capacitors.
  • The device can handle up to 5W of continuous power. However, it's recommended to derate the power handling to 3W or less to ensure reliable operation and minimize thermal stress.
  • Handle the device by the body, not the pins. Use an ESD wrist strap or mat, and ensure that the workspace is ESD-protected. Avoid touching the device pins or exposing them to static-prone materials.
  • Use a heat sink with a thermal resistance of 10°C/W or less. Ensure good airflow around the device, and consider using thermal interface materials to improve heat transfer.

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AUIRFR5305TRL Overview

Use the download button to access the AUIRFR5305TRL 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image IRFR5305TRRPBF International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5305PBF International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5305 International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR5305 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5305TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for AUIRFR5305TRL, check out Findchips.com