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AUIRFSA8409-7TRL - Infineon

Description: N-Channel 40 V 523A (Tc) 375W (Tc) Surface Mount PG-TO263-7

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AUIRFSA8409-7TRL - Infineon PCB footprint - Other - Other - AUIRFSA8409-7TRL-2
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AUIRFSA8409-7TRL Details

  • Manufacturer Part Number:

    AUIRFSA8409-7TRL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    360 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1438 pF

  • JESD-30 Code:

    R-PSSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    1440 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFSA8409-7TRL Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area for heat dissipation. A minimum of 1 oz copper thickness is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK is suggested.
  • To ensure EMC and reduce EMI, Infineon recommends using a shielded enclosure, keeping the PCB layout compact, and using a common-mode choke or ferrite bead on the power lines. Additionally, ensure that the device is properly decoupled and that the PCB has a solid ground plane.
  • Monitor the device's junction temperature (TJ), drain-source voltage (VDS), and drain current (ID) to prevent overheating and ensure reliability. TJ should be kept below 150°C, VDS below 30V, and ID below 10A.
  • Yes, the gate driver circuitry should be designed to provide a fast rise and fall time (<10ns) and a high current capability (>1A) to minimize electromagnetic emissions. Additionally, the gate driver should be decoupled from the power supply and have a low impedance path to the device.
  • Store the devices in their original packaging, away from direct sunlight and moisture. Handle the devices by the body, avoiding touching the pins or leads. Use an anti-static wrist strap or mat when handling the devices, and avoid bending or flexing the leads.

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AUIRFSA8409-7TRL Overview

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Part Image AUIRFSA8409-7P Infineon Technologies AG

Power Field-Effect Transistor, 360A I(D), 40V, 0.00069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET