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BAP55LX,315 - NXP

Description: PIN Diodes RF Pin Diode, SOD882D, DFN1006D-2, IF = 50 mA VF 0.95 V,

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BAP55LX,315 - NXP PCB footprint - Other - Other - BAP55LX,315-2
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BAP55LX,315 - NXP  - 3D model - Other - BAP55LX,315-2
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BAP55LX,315 Details

  • Manufacturer Part Number:

    BAP55LX,315

  • Brand Name:

    NXP Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    DFN

  • Package Description:

    1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2

  • Pin Count:

    2

  • Manufacturer Package Code:

    SOD882D

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Application:

    ATTENUATOR; SWITCHING

  • Breakdown Voltage-Min:

    50 V

  • Configuration:

    SINGLE

  • Diode Capacitance-Max:

    0.28 pF

  • Diode Capacitance-Nom:

    0.28 pF

  • Diode Element Material:

    SILICON

  • Diode Forward Resistance-Max:

    4.5 Ω

  • Diode Res Test Current:

    0.5 mA

  • Diode Res Test Frequency:

    100 MHz

  • Diode Type:

    PIN DIODE

  • Frequency Band:

    S BAND

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Minority Carrier Lifetime-Nom:

    0.27 µs

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.135 W

  • Qualification Status:

    Not Qualified

  • Reverse Test Voltage:

    20 V

  • Surface Mount:

    YES

  • Technology:

    POSITIVE-INTRINSIC-NEGATIVE

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAP55LX,315 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
  • Use a thermally conductive material for the heat sink, ensure good airflow, and consider using a thermal interface material to improve heat transfer. Also, follow the recommended derating curves for the device.
  • Use a common mode choke and a differential mode filter to reduce EMI. Shielding can be achieved using a metal can or a shielded enclosure. Ensure good grounding and decoupling to minimize radiation.
  • Keep the input and output tracks separate, use a star-point grounding system, and avoid crossing signal tracks. Use a ground plane to reduce radiation and consider using a shielded enclosure.
  • Use a 4-wire Kelvin connection for accurate voltage measurements. Use a spectrum analyzer to measure noise and distortion. Ensure the test setup is well-shielded and use a common mode choke to reduce EMI.

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BAP55LX,315 Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image BAP55LX NXP Semiconductors

Pin Diode, 50V V(BR), Silicon