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BAS116-TP - MCC

Description: Switching Diodes

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PCB Footprints
BAS116-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (Thickness 1.25mm)
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3D Models
BAS116-TP - MCC  - 3D model - SOT23 (3-Pin) - SOT-23 (Thickness 1.25mm)
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BAS116-TP Details

  • Manufacturer Part Number:

    BAS116-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LEAD FREE, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6.1

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.225 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    75 V

  • Reverse Current-Max:

    0.005 µA

  • Reverse Recovery Time-Max:

    3 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

BAS116-TP Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for BAS116-TP is -40°C to 125°C, although it can withstand storage temperatures from -50°C to 150°C.
  • BAS116-TP has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, to prevent damage during handling and assembly.
  • The maximum power dissipation for BAS116-TP is 250 mW, and it's essential to ensure that the device does not exceed this limit to prevent overheating and damage.
  • BAS116-TP is suitable for high-frequency applications up to 100 kHz, but it's essential to consider the device's parasitic capacitance and inductance when designing high-frequency circuits.
  • To ensure the reliability of BAS116-TP in harsh environments, it's recommended to follow proper soldering and assembly techniques, and to consider using conformal coating or potting to protect the device from moisture and contaminants.

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BAS116-TP Overview

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Part Image SBAS116LT1G onsemi

Rectifier Diode, Blank, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon, TO-236

Part Image BAS116RF Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon

Part Image BAS116LT1 Jiangsu Changjiang Electronics Technology Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM)

Part Image BAS116LT1 onsemi

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon, TO-236AB

Part Image BAS116-TP-HF Micro Commercial Components

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon

For a full list of alternate parts for BAS116-TP, check out Findchips.com