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BAS40LTH-HG3-08 - Vishay

Description: Small Signal Schottky Diode with TJ max. = 175 °C, AEC-Q101

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BAS40LTH-HG3-08 - Vishay PCB footprint - Other - Other - BAS40LTH-HG3-08
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BAS40LTH-HG3-08 - Vishay  - 3D model - Other - BAS40LTH-HG3-08
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BAS40LTH-HG3-08 Details

  • Manufacturer Part Number:

    BAS40LTH-HG3-08

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN1006-2A, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    0.5 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.35 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    40 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    40 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAS40LTH-HG3-08 Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for BAS40LTH-HG3-08 is between 250°C to 260°C for a maximum of 10 seconds.
  • Yes, the BAS40LTH-HG3-08 is a high-speed diode with a switching time of 4 ns, making it suitable for high-frequency applications up to 1 GHz.
  • The maximum allowable power dissipation for BAS40LTH-HG3-08 is 250 mW at an ambient temperature of 25°C.
  • No, the BAS40LTH-HG3-08 is not a radiation-hardened device. It is not designed to withstand high levels of radiation.
  • The equivalent series resistance (ESR) of BAS40LTH-HG3-08 is typically around 1.5 ohms.

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BAS40LTH-HG3-08 Overview

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