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BAT54SHE3-TP - MCC

Description: Small Signal Schottky Diodes

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PCB Footprints
BAT54SHE3-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (Thickness 1.25mm)
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3D Models
BAT54SHE3-TP - MCC  - 3D model - SOT23 (3-Pin) - SOT-23 (Thickness 1.25mm)
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BAT54SHE3-TP Details

  • Manufacturer Part Number:

    BAT54SHE3-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    30 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.4 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    0.6 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.2 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    0.005 µs

  • Reverse Test Voltage:

    25 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

BAT54SHE3-TP Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for the BAT54SHE3-TP is between 250°C to 260°C for a maximum of 10 seconds.
  • Yes, the BAT54SHE3-TP is a high-speed switching diode with a low reverse recovery time (trr) of 50 ns, making it suitable for high-frequency switching applications up to 100 MHz.
  • The maximum allowable power dissipation for the BAT54SHE3-TP is 500 mW at a temperature of 25°C, and it decreases as the temperature increases.
  • No, the BAT54SHE3-TP is not a radiation-hardened device. It is not designed to withstand high levels of radiation and should not be used in applications where radiation is a concern.
  • The equivalent series resistance (ESR) of the BAT54SHE3-TP is typically around 1.5 ohms, which is relatively low and makes it suitable for high-frequency applications.

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BAT54SHE3-TP Overview

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